Samsung 1TB 990 EVO MZ-V9E1T0BW M.2 2280 PCIe 4.0 x4 / 5.0 x2 NVMe 2.0 SSD


價格:
特價$750.00

描述

Specifications

  • Form Factor
    M.2
  • Capacity
    1TB
  • Sequential Read Speed
    Up to 5,000 MB/s
  • Sequential Write Speed
    Up to 4,200 MB/s

Model Code (Capacity)1)

  • MZ-V9E1T0BW 

General Feature

  • APPLICATION

    Client PCs

  • FORM FACTOR

    M.2 (2280)

  • INTERFACE

    PCIe® 4.0 x4 / 5.0 x2 NVMe™ 2.0

  • DIMENSION (WxHxD)

    80 x 22 x 2.38mm

  • WEIGHT

    Max 9.0g Weight

  • STORAGE MEMORY

    Samsung V-NAND TLC

  • CONTROLLER

    Samsung in-house Controller

  • CACHE MEMORY

    HMB(Host Memory Buffer)

Special Feature

  • TRIM SUPPORT

    Supported

  • S.M.A.R.T SUPPORT

    Supported

  • GC (GARBAGE COLLECTION)

    Auto Garbage Collection Algorithm

  • ENCRYPTION SUPPORT

    AES 256-bit Encryption (Class 0) TCG/Opal IEEE1667 (Encrypted drive)

  • WWN SUPPORT

    Not supported

  • DEVICE SLEEP MODE SUPPORT

    Yes

Performance2)

  • SEQUENTIAL READ

    1TB: Up to 5,000 MB/s

  • SEQUENTIAL WRITE

    1TB: Up to 4,200 MB/s

  • RANDOM READ (4KB, QD32)

    1TB: Up to 680,000 IOPS

  • RANDOM WRITE (4KB, QD32)

    1TB: Up to 800,000 IOPS

  • RANDOM READ (4KB, QD1)

    1TB: Up to 20,000 IOPS

  • RANDOM WRITE (4KB, QD1)

    1TB: Up to 90,000 IOPS

Environment

  • AVERAGE POWER CONSUMPTION
    (SYSTEM LEVEL)3)

    1TB: Average: Read 4.9 W / Write 4.5 W

  • POWER CONSUMPTION (IDLE)3)

    1TB: Typical 60 mW

  • POWER CONSUMPTION (DEVICE SLEEP)

    1TB: Typical 5 mW

  • ALLOWABLE VOLTAGE

    3.3 V ± 5 % Allowable voltage

  • RELIABILITY (MTBF)

    1.5 Million Hours Reliability (MTBF)

  • OPERATING TEMPERATURE

    0 - 70 ℃ Operating Temperature

  • SHOCK

    1,500 G & 0.5 ms (Half sine)

Accessories

  • INSTALLATION KIT

    Not Available

Software

Warranty4)

  • MZ-V9E1T0BW (1TB)

    5-year or 600TBW limited warranty

  • MZ-V9E2T0BW (2TB)

    5-year or 1200 TBW limited warranty

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